- 4DS Memory (4DS) is granted an additional US patent, marking its 32nd licence
- The patent was developed in-house and it is 100 per cent free from any royalty or licensing obligations, in accordance with its previous patents
- 4DS Chief Executive Officer and Managing Director Guido Amout says the grant is an important strategy for the company to protect its unique Interface Switching ReRAM in the overall ReRAM space
- 4DS Memory is trading 3.70 per cent up at 14 cents at 10:25 am AEST
4DS Memory (4DS) has been granted an additional US patent, marking its 32nd licence.
4DS Memory is a semiconductor development company of non-volatile memory tech, based in Silicon Valley in California. The company is said to be the first to develop Interface Switching ReRAM for next generation gigabyte storage in mobile and cloud.
Patent number 11,133,464, Conductive Amorphous Oxide Contact Layers, was developed in-house, like 4DS Memory’s previous patents. The company said it was free from any royalty or licensing obligations, as were its previous submissions.
“The granting of patents is an extremely important strategy for the company to protect its unique Interface Switching ReRAM in the overall ReRAM space,” 4DS Chief Executive Officer and Managing Director Guido Amout said.
The news follows the company’s 31st US grant in June for a resistive memory device containing a template layer.
Meanwhile, the company is continuing to collaborate with Western Digital subsidiary GST through a joint development agreement, as well as research and innovation hub, imec, for its microchip technology.
4DS Memory is trading 3.70 per cent up at 14 cents at 10:25 am AEST.