- 4DS Memory (4DS) has been granted a new patent, bringing its total number in the US to 34
- The patent, titled “Conductive Amorphous Oxide Contact Layers,” has been developed in-house and is free from any royalty or licensing obligations
- 4DS Interim Executive Chairman David McAuliffe says if the company successfully manufactures its Fourth Platform Lot this year, its 34 patents will become “even more valuable”
- 4DS Memory shares are up 5.88 per cent to 3.6 cents at 11:11 am AEDT
4DS Memory (4DS) has been granted a new patent, bringing its total number of patents in the US to 34.
4DS Memory develops non-volatile memory technology, with a current focus on developing an Interface Switching ReRAM product for next-generation gigabyte storage in mobile and cloud.
The new patent, titled “Conductive Amorphous Oxide Contact Layers,” has been developed in-house and is free from any royalty or licensing obligations.
“4DS now 100 per cent owns a world-class extensive portfolio of USA patents that ring fence and protect 4DS’s Interface Switching ReRAM technology as we continue development with imec,” Interim Executive Chairman Mr David McAuliffe said.
“If we are successful with the manufacture and analysis of the Fourth Platform Lot in 2023 these patents become even more valuable to the company.”
The news follows the company achieving cell operation in the megabit memory array of the Third Platform Lot, or third batch of chips, utilising improved test capabilities, after reporting late last year that the etch process had induced damage to the crystallinity of the 4DS PCMO layer.
4DS Memory shares are up 5.88 per cent to 3.6 cents at 11:11 am AEDT.