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- 4DS Memory (4DS) has been granted three additional patents by the U.S. Patent and Trademark Office
- This brings the semiconductor development company’s total number of granted U.S. patents to 26
- Recently, 4DS’ additional wafers delivered the highest speed and endurance the company has ever recorded
- The level of speed was similar to that of dynamic random-access memory, which is a type of semiconductor memory
- 4DS has filed another six U.S. patent applications to strengthen its property
- Company shares are up 4.08 per cent and are trading for 5.1 cents
4DS Memory (4DS) has been granted three additional patents by the U.S. Patent and Trademark Office.
The additional patents brings 4DS’ total number of granted U.S. patents to 26.
By name, the latest patents are the ‘Resistive Memory Device Having a Template Layer,’ ‘Resistive Memory Device having Ohmic Contacts,’ and ‘Resistive Memory Device having Side Barriers.’
“Having recently announced the best-recorded speed at near DRAM speed, the granting of these patents is a significant milestone for the company,” CEO and Managing Director Dr Guido Arnout said.
In June, 4DS announced its additional wafers achieved the best-recorded speed comparable to dynamic random-access memory (DRAM) speed. Importantly, this marked the highest speed and endurance the company has ever recorded.
“The 4DS portfolio of U.S. patents around Interface Switching ReRAM are extremely valuable assets which protects and ring-fences the Company’s position as it moves towards developing a megabit chip suitable for Storage Class Memory applications,” Guido added.
4DS has filed another six U.S. patent applications in the area of Interface Switching ReRAM for Storage Class Memory near DRAM speed. The additional patents will strengthen its intellectual property portfolio.
Company shares are up 4.08 per cent and are trading for 5.1 cents each at 10:32 am AEST.
